研究方向：氮化物材料及其电子器件应用、半导体器件、半导体物理

本人长期致力于氮化物材料及其电子器件应用研究，旨在通过氮化物材料的结构设计和可控生长不断提升氮化物电子器件的性能表现，并希望开拓氮化物材料的新应用，以使这个独特的材料体系尽可能地发挥出自身的潜力。

氮化物半导体具有禁带宽度大、击穿场强高、电子迁移率和饱和速度高等特点，此外氮化物半导体异质结界面可以形成极化诱导的高密度二维电子气，这些因素使得氮化物微波功率器件表现出大功率、高效率、耐高温和抗辐照等优势。我们从外延材料的角度不断推动GaN微波功率器件效率、频率和功率的提升，为5G/6G通信、雷达和微波成像等领域做出贡献。近年来，安装调试了西电历史上第一台氮化物分子束外延设备；建立了高质量GaN和低Al组分AlGaN等单晶薄膜的同质外延生长方法；实现了掺杂浓度高达10²⁰cm^-3的Si重掺杂GaN单晶薄膜，以此为基础攻克了GaN HEMT器件的源漏再生长技术，为GaN微波器件的尺寸微缩和频率提升打下了良好的基础；突破了超薄势垒AlN/GaN异质结的分子束外延生长技术，为高效率GaN毫米波功率器件研究奠定了坚实的材料基础。

神经形态器件是未来人工智能芯片的核心器件。本人在氮化物材料的生长与表征、神经形态器件的设计、制备及物理机制等方面取得了一系列研究成果。通过系统的实验研究和理论分析，提出了氮化物忆阻器的氮离子储蓄区模型，对该类器件的特性调控和机理研究具有重要的指导意义。铌氧化物既能表现出离子迁移行为，也具有莫特金属绝缘体相变，可用于构建电子神经元，是极为重要的神经形态电子材料。通过分析电极诱导的阻变极性反转这一有趣现象，揭示了电极/氧化铌界面在电阻转变过程中的作用。通过对氮化物和铌氧化物材料和器件的研究，我们希望实现低功耗和高可靠的电子突触和电子神经元，进而构建出可用于图像处理和语音识别等任务的高性能类脑芯片。

近年来在Applied Physics Letters, Journal of Physics D, Journal of Applied Physics, Advanced Electronic Materials等知名国际期刊上发表SCI论文超过30篇，授权国家发明专利一项，主持国家自然科学青年基金，陕西省自然科学基础研究计划，国家自然科学基金重点项目子课题等项目，参与核高基重大专项、科技部重点研发计划、国家自然科学基金面上项目和华为技术创新合作项目等科研项目。

学术论文：

1.Ziliang Zhou,Mei Yang*, Zhen Fu, Hong Wang, Xiaohua Ma, and Haixia Gao, Applied Physics Letters, 2020, 117(24): 243502

2.Mei Yang, Hong Wang, Xiaohua Ma, Haixia Gao, and Bin Wang, Applied Physics Letters, 2017, 111(23): 233510

3.Mei Yang, Hong Wang, Xiaohua Ma, Haixia Gao, and Yue Hao, Journal of Vacuum Science & Technology B, 2017, 35(3): 032203

4.Mei Yang, Xiaohua Ma, Hong Wang, He Xi, Ling Lv, Peng Zhang, Yong Xie, Haixia Gao, Yanrong Cao, Shuwei Li, and Yue Hao, Materials Research Express, 2016, 3(7): 075903

5.Mei Yang, Lizhu Ren, Yunjia Wang, Fengmei Yu, Meng Meng, Wenqi Zhou, Shuxiang Wu, and Shuwei Li*, Journal of Applied Physics, 2014, 115(13): 134505

6.Mei Yang, Ni Qin, Lizhu Ren, Yunjia Wang, Kungan Yang, Fengmei Yu, Wenqi Zhou, Meng Meng, Shuxiang Wu, Dinghua Bao, and Shuwei Li*, Journal of Physics D: Applied Physics, 2014, 47(4): 045108

7.Mei Yang, Dinghua Bao, and Shuwei Li*, Journal of Physics D: Applied Physics, 2013, 46(49): 495111

8.Mei Yang, Ping Hu, Jingquan Lu, Qibiao Lv, and Shuwei Li*, Applied Physics Letters, 2011, 98(21): 213501

9.Song, F (Song, Fang); Wang, H (Wang, Hong); Sun, J (Sun, Jing); Gao, HX (Gao, Haixia); Wu, SW (Wu, Shiwei);Yang, M(Yang, Mei); Ma, XH (Ma, Xiaohua); Hao, Y (Hao, Yue),IEEE Electron Device Letters, 2018, 39(1):31-34

10.Wang, Z (Wang, Zhan); Xie, Y (Xie, Yong); Wang, HL (Wang, Haolin); Wu, RX (Wu, Ruixue); Nan, T (Nan, Tang); Zhan, YJ (Zhan, Yongjie); Sun, J (Sun, Jing); Jiang, T (Jiang, Teng); Zhao, Y (Zhao, Ying); Lei, YM (Lei, Yimin); Yang, M (Yang, Mei); Wang, WD (Wang, Weidong); Zhu, Q (Zhu, Qing); Ma, XH (Ma, Xiaohua); Hao, Y (Hao, Yue), NANOTECHNOLOGY, 2017, 28(32), 325602

11.Shiwei Wu, Hong Wang, Jing Sun, Fang Song, Zhan Wang,Mei Yang, He Xi, Yong Xie, Haixia Gao, Jigang Ma, Xiaohua Ma, and Yue Hao,IEEE Electron Device Letters, 2016, 37(8):990-993

12.Kungan Yang, Ping Hu, Shuxiang Wu, Lizhu Ren,Mei Yang, Wenqi Zhou, Fengmei Yu, Yunjia Wang, Meng Meng, G. L. Wang, and Shuwei Li,Materials Letters, 2016, 166:23-25

13.Yunjia Wang,Mei Yang, Lizhu Ren, Wenqi Zhou, Kungan Yang, Fengmei Yu, Meng Meng, Shuxiang Wu, and Shuwei Li,Thin Solid Films, 2016, 598:311-314

14.Fengmei Yu, Lizhu Ren, Meng Meng, Yunjia Wang,Mei Yang, Shuxiang Wu, and Shuwei Li,Journal of Applied Physics, 2014, 115(13):133911

15.Lizhu Ren,Mei Yang, Wenqi Zhou, Shuxiang Wu, and Shuwei Li,The Journal of Physical Chemistry C, 2014, 118(1):243-24

16.Shuxiang Wu, Lizhu Ren, Fengmei Yu, Kungan Yang,Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, and Shuwei Li,Applied Physics A-Materials Science & Processing, 2014, 116(4):1741-1745

17.Shuxiang Wu, Lizhu Ren, J. Qing, Fengmei Yu, Kungan Yang,Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Xiang Zhou, and Shuwei Li,ACS Applied Materials & Interfaces, 2014, 6(11):8575-8579

18.Shuxiang Wu, Xinman Chen, Lizhu Ren, Wei Hu, Fengmei Yu, Kungan Yang,Mei Yang, Yunjia Wang, Meng Meng, Weiqi Zhou, Dinghua Bao, and Shuwei Li,Journal of Applied Physics, 2014, 116(7):074515

19.Fengmei Yu, Yajing Liu,Mei Yang, Shuxiang Wu, Wenqi Zhou, and Shuwei Li,Thin Solid Films, 2013, 531:228-232

20.Lizhu Ren, Shuxiang Wu,Mei Yang, Wenqi Zhou, and Shuwei Li,Journal of Applied Physics, 2013, 114(5):053907

21.Qibiao Lv, Shuxiang Wu, Jingquan Lu,Mei Yang, Ping Hu, and Shuwei Li,Journal of Applied Physics, 2011, 110(10):104511

22.Jingquan Lu,Mei Yang, Ping Hu, Qibiao Lv, and Shuwei Li,Journal of the Electrochemical Society, 2011, 158(7):H704-H707

23.Ping Hu, Xinyu Li, Jingquan Lu,Mei Yang, Qibiao Lv, and Shuwei Li,Physics Letters A, 2011, 375(18):1898-1902

24.Lingmin Xu,Mei Yang, Xinyu Li, Ping Hu, and Shuwei Li,Scripta Materialia, 2010, 63(1):113-116

25.Lingmin Xu, Xiangjun Xing,Mei Yang, Xinyu Li, Shuxiang Wu, Ping Hu, Jingquan Lu, and Shuwei Li,Applied Physics A: Materials Science & Processing, 2010, 98(2):417-421

26.Xinyu Li, Shuxiang Wu, Ping Hu, Xiangjun Xing, Yajing Liu, Yunpeng Yu,Mei Yang, Jingquan Lu, Shuwei Li, and W. Liu,Journal of Applied Physics, 2009, 106(4):043913