周久人
个人信息:Personal Information
教授 博士生导师 研究生导师
性别:男
毕业院校:西安电子科技大学
学历:博士研究生毕业
学位:工学博士学位
在职信息:在岗
所在单位:杭州研究院
入职时间:2021-11-01
学科:微电子学与固体电子学
办公地点:西电杭州研究院科研楼203-11
联系方式:zhoujiuren@163.com/zhoujiuren@xidian.edu.cn
电子邮箱:
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- [1]Photoelectric In-memory Logic and Computing Achieved in HfO2-based Ferroelectric Optoelectronic Memcapacitors.IEEE EDL.2024
- [2]Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate.IEEE EDL.2024
- [3]Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption per Programming Event.IEEE EDL.2024
- [4]Ferroelectric-Semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering.IEEE EDL.2022
- [5]Depolarization Field Engineered Ferroelectric Mechanical Transistor with 0.3-Volts VDD.IEEE EDL.2023
- [6]Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic.IEEE EDL.2023
- [7]A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [8]A Modeling Study on Electrical and Thermal Behavior of CNT TSV for Multilayer Structure.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [9]Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic.IEEE ELECTRON DEVICE LETTERS
- [10]High mobility germanium-on-insulator p-channel FinFETs.中国科学. 信息科学
- [11]Voltage Bias Scheme Optimization in FeFET Based Neural Network System.IEEE EDL.2023
- [12]Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array.IEEE TED.2023
- [13]Ferroelectric-Semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering.IEEE ELECTRON DEVICE LETTERS
- [14]HfO₂-Based Ferroelectric Optoelectronic Memcapacitors.IEEE EDL.2023
- [15]A 6.5 nm thick anti-ferroelectric HfAlOx film for energy storage devices with a high density of 63.7 J·cm−3.Journal of Physics D: Applied Physics.2022
- [16]Ferroelectric Devices for Intelligent Computing.Intelligent Computing.2022
- [17]Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.IEEE VLSI.2022
- [18]First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.IEEE VLSI.2022
- [19]Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects.Micromachines.2022
- [20]Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory.Optics Express.2022