基于宽禁带氮化镓半导体的微波毫米波功率器件兼具高工作频率、高输出功率、高射频转换效率、耐高温等优异特点，是卫星通讯、5G移动通信等领域不可或缺的核心器件。氮化镓射频器件因其优异性能以及在高新技术产业中举足轻重的作用，已成为全球半导体领域的研究焦点和世界各国竞相抢占的战略制高点。长期在宽禁带半导体重点实验室和国家工程研究中心致力于宽禁带半导体器件与应用研究，近年来主持了国家重点研发计划课题、NSFC面上和青年基金、产学研合作等十余项课题研究。已在IEEE Electron Device Lett.、IEEE Trans. Electron Devices、IEEE IRPS、IEEE WiPDA、Appl. Phys. Lett.等国际主流期刊会议发表SCI论文70余篇，获授权国家发明专利23项，科研成果获得陕西省科学技术一等奖2项（2016年度、2020年度）。

国家重点研发计划课题, 毫米波功率器件与芯片，课题负责人，2020.12~2023.11；

NSFC面上项目，氮化镓增强型射频功率器件研究，项目负责人，2022.01~2025.12；

NSFC重点项目，毫米波太赫兹集成电路设计方法与EDA关键技术，子课题负责人，2022.01-2026.12；

NSFC青年项目，基于极化调控技术的氮化镓增强型器件，项目负责人，2018.01-2020.12；

校企联合实验室项目、企业/研究所横向项目多项，氮化镓射频材料、器件、芯片、可靠性等合作研究，项目负责人。

Comparative Study on Charge Trapping Induced V_th Shift for GaN-based MOS-HEMTs With and Without Thermal Annealing Treatment

Jiejie Zhu, Xiaohua Ma, Bin Hou, Mi Ma, Qing Zhu, Lixiang Chen, Ling Yang, Peng Zhang, Xiaowei Zhou, Yue Hao.

IEEE Transactions on Electron Devices, 2018, 65(12): 5343-5349. [PDF]

Direct observation of gate leakage paths in AlGaN/GaN high electron mobility transistors by electron beam-induced current

Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Qing Zhu, Meng Zhang, Ling Yang, Jun Yin, Jiafen Wu, and Yue Hao.

IEEE Transactions on Device and Materials Reliability, 2018, 18(3): 359-363. [PDF]

Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

Lixiang Chen, Xiaohua Ma, Jiejie Zhu, Bin Hou, Fang Song, Qing Zhu, Meng Zhang, Ling Yang, and Yue Hao.

IEEE Transactions on Electron Devices, 2018, 65(8): 3149-3155. [PDF]

Threshold Voltage Shift and Interface/Border Trapping Mechanism in Al₂O₃/AlGaN/GaN MOSHEMTs

Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao

IEEE International Reliability Physics Symposium (IRPS), 2018: P-WB.1-1~1-4. [PDF]

0.9 A-mm, 2.6-V Flash-Like Normally-Off Al₂O₃/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Bin Hou, Xiaohua Ma, Jiejie Zhu, Ling Yang, Weiwei Chen, Minhan Mi, Qing Zhu, Lixiang Chen, Rong Zhang, Meng Zhang, Xiaowei Zhou, Yue Hao

IEEE Electron Devices Letters, 2018, 39(3): 397-400. [PDF]

Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance

Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou, Xiaohua Ma, Yue Hao

IEEE Electron Devices Letters, 2018, 39(1): 79-82. [PDF]

Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region

Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Linan Yang, and Yue Hao.

IEEE Transactions on Electron Devices , 2017, 64(12): 4875-4881.

90nm Gate length Enhancement-mode AlGaN/GaN HEMT with plasma oxidation technology for high frequency application

Minhan Mi, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Wu, Xiaohua Ma, Yue Hao.

Applied Physics Letters, 2017, 111(17): 173502.

Enhanced g_m and f_T with High Johnson's Figure-of-Merit in thin barrier AlGaN/GaN HEMTs by TiN-based source contact ledge

Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, et al. 

IEEE Electron Devices Letters, 2017, 38(11): 1563-1566.

Exponential dependence of capture cross section on activation energy for interface traps in Al₂O₃/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Jiejie Zhu, Qing Zhu, Lixiang Chen, Mei Wu, Bin Hou, Ling Yang, Yue Hao, and Xiaohua Ma

Applied Physics Letters , 2017, 111(16): 163502. [PDF]

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Ling Yang, Minhan Mi, Bin Hou, Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao

IEEE Transactions on Electron Devices , 2017, 64(10): 4057-4064.

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f_T/f_max of 41/125GHz

Bin Hou, Xiaohua Ma, Ling Yang, Jiejie Zhu, Qing Zhu, Lixiang Chen, Minhan Mi, Hengshuang Zhang, Meng Zhang, Peng Zhang, Xiaowei Zhou, and Yue Hao

Applied Physics Express, 2017, 10(7): 076501.

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Ling Yang,  Bin Hou,  Minhan Mi,   Jiejie Zhu, Meng Zhang,  Qing Zhu,  Yunlong He, Lixiang Chen, Xiaowei Zhou, Xiaohua Ma, Yue Hao

IEEE International Reliability Physics Symposium (IRPS) , 2017: WB-2.1-WB-2.4.

Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-based MIS-HEMTs with Al₂O₃/AlN Gate Stack

Jiejie Zhu, Xiaohua Ma, Qing Zhu, Lixiang Chen, Bin Hou, Ling Yang, and Yue Hao.

IEEE Transactions on Electron Devices, 2017, 64(3): 840-847. [PDF]

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric 

Jiejie Zhu, Xiaohua Ma, Bin  Hou, Lixiang Chen, Qing Zhu, and Yue Hao.

Materials Research Express, 2017, 4(2):025902.

Comparative study on interface and bulk charges in AlGaN/GaN MIS heterostructures with Al₂O₃, AlN, and Al₂O₃/AlN laminated dielectrics

Jiejie Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Yong Xie, and Yue Hao.

Japanese Journal of Applied Physics, 2016, 55(5S): 05FH01.

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Qing Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Jiejie Zhu, Meng Zhang, Lixiang Chen, Yanrong Cao, Yue Hao.

Chinese Physics B, 2016, 25(6): 067305.

Investigation of trap states in Al₂O₃InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Peng Zhang, Shenglei Zhao, Junshuai Xue, Jiejie Zhu, Xiaohua Ma, Jincheng Zhang, Yue Hao.

Chinese Physics B, 2015, 24(12): 127306.

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Bin Hou, Xiaohua Ma, Weiwei Chen, Jiejie Zhu, Shenglei Zhao, Yonghe Chen, Yong Xie, Jincheng Zhang and Yue Hao.

Applied Physics Letters, 2015, 107(16): 163503.

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Jiejie Zhu, Xiaohua Ma, Yong Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, and Yue Hao.

IEEE Transactions on Electron Devices , 2015, 62(2): 512-518. [PDF]

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Yonghe Chen, Xuefeng Zheng, Jincheng Zhang, and Yue Hao.

Applied Physics Letters, 2014, 105(17): 173507.

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Weiwei Chen, Xiaohua Ma, Bin Hou, Shenglei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao.

Microelectronics Reliability , 2014, 54(6-7):1293-1298.

Investigation of gate leakage mechanism in Al₂O₃/Al_0.55Ga_0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao.

Applied Physics Letters, 2014, 104(15): 153510. [PDF]

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, and Yue Hao.

AIP Advances, 2014, 4(3): 037108.

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Xiaohua Ma, Weiwei Chen, Bin Hou, Kai Zhang, Jiejie Zhu, Jincheng Zhang, Xuefeng Zheng, and Yue Hao.

Applied Physics Letters, 2014, 104(9): 093504.

Quantitative characterization of interface traps in Al₂O₃/AlGaN/GaN MOS-HEMTs by dynamic capacitance dispersion technique

Xiaohua Ma, Jiejie Zhu, Xueyang Liao, Tong Yue, Weiwei Chen, and Yue Hao.

Applied Physics Letters, 2013, 103(3): 033510. [PDF]

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Weiwei Chen, Xiaohua Ma, Bin Hou, Jiejie Zhu, Jincheng Zhang, Yue Hao.

Chinese Physics B, 2013, 22(10): 107303.