Comparative Study on Charge Trapping InducedV_thShift for GaN-based MOS-HEMTs With and Without Thermal Annealing Treatment

Jiejie Zhu, Xiaohua Ma, Bin Hou, Mi Ma, Qing Zhu, Lixiang Chen, Ling Yang, Peng Zhang, Xiaowei Zhou, Yue Hao.

IEEE Transactions on Electron Devices, 2018, 65(12): 5343-5349.[PDF]

Direct observation of gate leakage paths in AlGaN/GaN high electron mobility transistors by electron beam-induced current

Lixiang Chen, Xiaohua Ma,Jiejie Zhu, Bin Hou, Qing Zhu, Meng Zhang, Ling Yang, Jun Yin, Jiafen Wu, and Yue Hao.

IEEE Transactions on Device and Materials Reliability, 2018, 18(3): 359-363.[PDF]

Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

Lixiang Chen, Xiaohua Ma,Jiejie Zhu, Bin Hou, Fang Song, Qing Zhu, Meng Zhang, Ling Yang, and Yue Hao.

IEEE Transactions on Electron Devices, 2018, 65(8): 3149-3155.[PDF]

Threshold Voltage Shift and Interface/Border Trapping Mechanism in Al₂O₃/AlGaN/GaN MOSHEMTs

Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao

IEEE International Reliability Physics Symposium (IRPS), 2018: P-WB.1-1~1-4.[PDF]

0.9 A-mm, 2.6-V Flash-Like Normally-Off Al₂O₃/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Bin Hou, Xiaohua Ma,Jiejie Zhu, Ling Yang, Weiwei Chen, Minhan Mi, Qing Zhu, Lixiang Chen, Rong Zhang, Meng Zhang, Xiaowei Zhou, Yue Hao

IEEEElectron DevicesLetters, 2018, 39(3): 397-400.[PDF]

Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance

Jiejie Zhu, Lixiang Chen, Jie Jiang, Xiaoli Lu, Ling Yang, Bin Hou, Min Liao, Yichun Zhou, Xiaohua Ma, Yue Hao

IEEEElectron DevicesLetters, 2018, 39(1): 79-82.[PDF]

Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region

Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou,Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Linan Yang, and Yue Hao.

IEEE Transactions on Electron Devices, 2017, 64(12): 4875-4881.

90nm Gate length Enhancement-mode AlGaN/GaN HEMT with plasma oxidation technology for high frequency application

Minhan Mi, Ling Yang, Bin Hou,Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Wu, Xiaohua Ma, Yue Hao.

Applied Physics Letters, 2017, 111(17): 173502.

Enhancedg_mandf_Twith High Johnson's Figure-of-Merit in thin barrier AlGaN/GaN HEMTs by TiN-based source contact ledge

Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang,Jiejie Zhu, et al.

IEEE Electron DevicesLetters, 2017, 38(11): 1563-1566.

Exponential dependence of capture cross section on activation energy for interface traps in Al₂O₃/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Jiejie Zhu, Qing Zhu, Lixiang Chen, Mei Wu, Bin Hou, Ling Yang, Yue Hao, and Xiaohua Ma

Applied Physics Letters, 2017, 111(16): 163502.[PDF]

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Ling Yang, Minhan Mi, Bin Hou,Jiejie Zhu, Meng Zhang, Yunlong He, Yang Lu, Qing Zhu, Xiaowei Zhou, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao

IEEE Transactions on Electron Devices, 2017, 64(10): 4057-4064.

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors withf_T/f_maxof 41/125GHz

Bin Hou, Xiaohua Ma, Ling Yang,Jiejie Zhu, Qing Zhu, Lixiang Chen, Minhan Mi, Hengshuang Zhang, Meng Zhang, Peng Zhang, Xiaowei Zhou, and Yue Hao

Applied Physics Express, 2017, 10(7): 076501.

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Ling Yang, Bin Hou, Minhan Mi, Jiejie Zhu, Meng Zhang, Qing Zhu, Yunlong He, Lixiang Chen, Xiaowei Zhou, Xiaohua Ma, Yue Hao

IEEE International Reliability Physics Symposium (IRPS), 2017: WB-2.1-WB-2.4.

Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-based MIS-HEMTs with Al₂O₃/AlN Gate Stack

Jiejie Zhu, Xiaohua Ma, Qing Zhu, Lixiang Chen, Bin Hou, Ling Yang, and Yue Hao.

IEEE Transactions on Electron Devices, 2017, 64(3): 840-847.[PDF]

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Jiejie Zhu, Xiaohua Ma, Bin Hou, Lixiang Chen, Qing Zhu, and Yue Hao.

Materials Research Express, 2017, 4(2):025902.

Comparative study on interface and bulk charges in AlGaN/GaN MIS heterostructures with Al₂O₃, AlN, and Al₂O₃/AlN laminated dielectrics

Jiejie Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou, Yong Xie, and Yue Hao.

Japanese Journal of Applied Physics, 2016, 55(5S): 05FH01.

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Qing Zhu, Xiaohua Ma, Weiwei Chen, Bin Hou,Jiejie Zhu, Meng Zhang, Lixiang Chen, Yanrong Cao, Yue Hao.

Chinese Physics B, 2016, 25(6): 067305.

Investigation of trap states in Al₂O₃InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Peng Zhang, Shenglei Zhao, Junshuai Xue,Jiejie Zhu, Xiaohua Ma, Jincheng Zhang, Yue Hao.

Chinese Physics B, 2015, 24(12): 127306.

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Bin Hou, Xiaohua Ma, Weiwei Chen,Jiejie Zhu, Shenglei Zhao, Yonghe Chen, Yong Xie, Jincheng Zhang and Yue Hao.

Applied Physics Letters, 2015, 107(16): 163503.

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Jiejie Zhu, Xiaohua Ma, Yong Xie, Bin Hou, Weiwei Chen, Jincheng Zhang, and Yue Hao.

IEEE Transactions on Electron Devices, 2015, 62(2): 512-518.[PDF]

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Weiwei Chen, Xiaohua Ma, Bin Hou,Jiejie Zhu, Yonghe Chen, Xuefeng Zheng, Jincheng Zhang, and Yue Hao.

Applied Physics Letters, 2014, 105(17): 173507.

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Weiwei Chen, Xiaohua Ma, Bin Hou, Shenglei Zhao,Jiejie Zhu, Jincheng Zhang, Yue Hao.

Microelectronics Reliability, 2014, 54(6-7):1293-1298.

Investigation of gate leakage mechanism in Al₂O₃/Al_0.55Ga_0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, Yue Hao.

Applied Physics Letters, 2014, 104(15): 153510.[PDF]

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Jiejie Zhu, Xiaohua Ma, Bin Hou, Weiwei Chen, and Yue Hao.

AIP Advances, 2014, 4(3): 037108.

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Xiaohua Ma, Weiwei Chen, Bin Hou, Kai Zhang,Jiejie Zhu, Jincheng Zhang, Xuefeng Zheng, and Yue Hao.

Applied Physics Letters,2014, 104(9): 093504.

Quantitative characterization of interface traps in Al₂O₃/AlGaN/GaN MOS-HEMTs by dynamic capacitance dispersion technique

Xiaohua Ma,Jiejie Zhu, Xueyang Liao, Tong Yue, Weiwei Chen, and Yue Hao.

Applied Physics Letters,2013, 103(3): 033510.[PDF]

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Weiwei Chen, Xiaohua Ma, Bin Hou,Jiejie Zhu, Jincheng Zhang, Yue Hao.

Chinese Physics B, 2013, 22(10): 107303.