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Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy

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Affiliation of Author(s):微电子学院

Title of Paper:Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy

Journal:JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

First Author:Xin, Bin^Zhang, Yu-Ming^Wu, Hong-Ming^Feng, Zhe Chuan^Lin, Hao-Hsiung^Jia, Ren-Xu

Indexed by:Article

Document Code:SCI WOS:000379792200005

Volume:34

Issue:3

ISSN No.:0734-2101

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI

Pre One:Super-V-shaped structure on 3C-SiC grown on the C-face of 4H-SiC

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