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郑雪峰
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Paper Publications
[1]The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes.CHINESE PHYSICS LETTERS.2016,33(11)
[2]Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress.CHINESE PHYSICS B.2015,24(1)
[3]Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation.CHINESE PHYSICS B.2015,24(2)
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