一种具有宽漂移区的双结单光子雪崩二极管及其制备方法
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Disigner of the Invention:张军琴,徐林可,梁琪光,杨银堂
Type of Patent:Invent
State of Patent:Authorized patents
Authorization number:ZL 2022 1 1547245.7
Service Invention or Not:no
Authorization Date:2023-03-07
Hits:
Disigner of the Invention:张军琴,徐林可,梁琪光,杨银堂
Type of Patent:Invent
State of Patent:Authorized patents
Authorization number:ZL 2022 1 1547245.7
Service Invention or Not:no
Authorization Date:2023-03-07