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Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes

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Title of Paper:Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes

Journal:Applied Optics

Indexed by:Article

Correspondence Author:Liu Aofei, Zhang Junqin*, Xing Hailong,Yang Yintang

Discipline:Engineering

Volume:19

Issue:58

Page Number:5339-5346

Translation or Not:no

Date of Publication:2019-07-17

Included Journals:SCI

Attachments:

Pre One:Design of high linearity InGaAs/InP avalanche photodiode with a hybrid absorption layer structure

Next One:The Optical Gain of a Si-Based Lattice Matched Si0.15Ge0.621Sn0.229/ Si0.637Ge0.018Sn0.345 MQW Laser Research

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