个人简介：

2017年毕业于西安电子科技大学，2017~2019年于香港科技大学做博士后研究。主要从事功率半导体器件设计与理论研究，主持国家自然科学基金，广东省自然科学基金，广东省基础研究计划,南通市"揭榜挂帅"项目；作为主要成员参与并完成了国家重点基础研究发展计划 、十三五预研基金项目、香港创新与科技局「企業支援計劃」Enterprise Support Scheme (ESS)等项目。在国内外重要期刊和会议上发表论文十余篇，申请专利三十余项，授权专利十余项。

部分代表性论文：

1. S. Yuan,Z. Yan, X. W. Gong, et al.,"A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study ", in Micromachines, 2024. (SCI, IF=3.3)

2.  S. Yuan,Y. Li, X. W. Gong, et al., "Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT", in Micromachines, 2024. (SCI, IF=3.3)

3.  Xi Jiang, Tao Jiang, Shijie Zhang, Song Yuan et al., "Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMT", in IEEE Transactions on Electron Devices, 2024.  (通讯作者）  (SCI, IF=3.1)

4.  Y. Wang, Xi Jiang, Song Yuan et al., "Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction", in IEEE Transactions on Electron Devices, 2024   (SCI, IF=3.1)

5.  Z. Yan, S. Yuan, Xi Jiang, et al., "A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors", in IEEE Transactions on Electron Devices, 2023.  (SCI, IF=3.1)

6.  S. Yuan,B. X. Duan, et al., "Novel LDMOS with assisted deplete-substrate layer consist of super junction under the drain", in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD, 功率半导体顶级会议)

7.  S. Yuan,B. X. Duan, et al., "Analytical model of LDMOS with a single step buried oxide layer", in Superlattices and microstructures,  2016.  (SCI, IF=3.1)

8.  S. Yuan,B. X. Duan, et al., "New Al0.25ga0.75n/gan High Electron Mobility Transistor With Partial Etched Algan Layer",  in Superlattices and microstructures,  2016.  (SCI, IF=3.1)

9.  S. Yuan,B. X. Duan, et al., "Analytical model of LDMOS with a double step buried oxide layer",  in Solid-State Electronics,  2016.  (SCI, IF=1.4)

10.  B. X. Duan, S. Yuan,  et al.,  "New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation", in IEEE  Electron Device Letters,  2014.  (SCI, IF=4.1)

团队信息：

本团队为广研院半导体与集成电路研究中心下的半导体功率芯片设计与封测实验室由弓小武教授领导，团队负责建设运营广东省公共服务平台“氮化镓、碳化硅半导体器件及模块封装测试技术平台”，同时广研院还拥有“第三代半导体创新中心”，可以供广大学子进行第三代半导体的芯片、封装、可靠性实验研究。

欢迎各位微电子、电力电子学科的学生报考研究生！

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