一种基于双MOS栅控的P型碳化硅晶闸管及其制备方法
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Affilication of Author(s):微电子学院
Patent Coverage:国内
Type of Patent:发明
Application Number:CN201911067748.2
Authorization number:CN201911067748.2
Number of Inventors:7
Service Invention or Not:no
Application Date:2019-11-04
Authorization Date:2021-03-23