基于Ga2O3/SiC异质结构的光电NPN晶体管及其制备方法
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Affilication of Author(s):微电子学院
Patent Coverage:国内
Type of Patent:发明
Application Number:CN201611123675.0
Authorization number:CN201611123675.0
Number of Inventors:4
Service Invention or Not:no
Application Date:2016-12-08
Authorization Date:2019-07-09