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基于双异质结的Ga2O3/GaN/SiC光电探测二极管及其制备方法

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Affilication of Author(s):微电子学院

Patent Coverage:国内

Type of Patent:发明

Application Number:CN201611124461.5

Authorization number:CN201611124461.5

Number of Inventors:4

Service Invention or Not:no

Application Date:2016-12-08

Authorization Date:2017-10-03

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