基于P型GaN漏电隔离层的同质外延氮化镓高电子迁移率晶体管及制作方法
Hits:
Affilication of Author(s):微电子学院
Patent Coverage:国内
Type of Patent:发明
Application Number:CN202110826341.4
Authorization number:CN202110826341.4
Number of Inventors:10
Service Invention or Not:no
Application Date:2021-07-21
Authorization Date:2022-12-02