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InAlN/AlGaN增强型高电子迁移率晶体管及其制作方法

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Affilication of Author(s):100900

Teaching and Research Group:1114

Patent Coverage:1

Type of Patent:1

Application Number:201410570899

Number of Inventors:4

Service Invention or Not:no

Application Date:2014-10-23

Authorization Date:2017-02-15

Pre One:基于P型GaN漏电隔离层的同质外延氮化镓高电子迁移率晶体管及制作方法

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