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个人信息：Personal Information
教授
性别：男
毕业院校：西安电子科技大学
学历：博士研究生毕业
学位：博士学位
在职信息：在岗
所在单位：微电子学院
学科：微电子学与固体电子学
联系方式：chongw@xidian.edu.cn
扫描关注
- [1]李昂.Lattice-matched AlInN_GaN multi-channel__heterostructure and HEMTs with low onresistance.Applied physics Letter,2021， (119)
- [2]GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V.Superlattices and Microstructures.2021,"Vol. 156, (106952)
- [3]Comparative Study of Characteristics and Interface States with and without Post-Gate-Annealing Treatment for AlGaN/GaN-Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2020,1900981
- [4]Effects of Recess Depths on Performance of AlGaNGaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator.Solid State Electronics.2020,"Vol,163, (107649):pp:1-6"
- [5]Low ohmic-contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region.ELECTRONICS LETTERS.2015,51 (25):2146-2147
- [6]GaN-based FinFET with double-channel AlGaN/GaN heterostructure.Electronics Letters.2018,54 (5)
- [7]Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment.ACTA PHYSICA SINICA.2016,65 (3)
- [8]Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT.Chinese Physics B.2016,25 (10)
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