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Affiliation of Author(s):微电子学院

Title of Paper:Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment

Journal:ACTA PHYSICA SINICA

First Author:Wang Chong^Zhao Meng-Di^Pei Jiu-Qing^He Yun-Long^Li Xiang-Dong^Zheng Xue-Feng^Mao Wei^Ma Xiao-Hua^Zhang Jin-Cheng^Hao Yue

Indexed by:Article

Document Code:SCI WOS:000370946000045

Volume:65

Issue:3

ISSN No.:1000-3290

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI