Effects of Recess Depths on Performance of AlGaNGaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator
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Title of Paper:Effects of Recess Depths on Performance of AlGaNGaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator
Journal:Solid State Electronics
Indexed by:Letter
Document Code:SCI：000496807500007
Discipline:Engineering
Volume:"Vol,163,
Issue:107649
Page Number:pp:1-6"
Translation or Not:no
Date of Publication:2020-05-14
Included Journals:SCI
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