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汤晓燕
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Professor Supervisor of Doctorate Candidates graduate teacher
Paper Publications
[1]Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes.SOLID-STATE ELECTRONICS.2015,103:83-89
[2]Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode.JAPANESE JOURNAL OF APPLIED PHYSICS.2015,54(10)
[3]Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET.Wuli Xuebao/Acta Physica Sinica.2014,63(20)
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