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一种基于N型纳米薄层来提高N型DiMOSFET沟道迁移率方法

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Affilication of Author(s):100900

Patent Coverage:1

Type of Patent:1

Application Number:201410166456.5

Number of Inventors:7

Service Invention or Not:no

Application Date:2014-04-21

Authorization Date:2017-04-05

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