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一种碳化硅沟槽MOS结势垒肖特基二极管及其制备方法

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Affilication of Author(s):100900

Patent Coverage:1

Type of Patent:1

Application Number:201410166376.X

Number of Inventors:7

Service Invention or Not:no

Application Date:2014-04-21

Authorization Date:2017-06-06

Pre One:一种具有环形块状埋层的沟槽式浮动结碳化硅SBD器件

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