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Scientific Research
宋庆文
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Professor Supervisor of Doctorate Candidates graduate teacher
Scientific Research
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Paper Publications
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Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands.SUPERLATTICES AND MICROSTRUCTURES.2016,99:62-66
Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands.SUPERLATTICES AND MICROSTRUCTURES.2016,99:62-66
Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.2015,15(4):543-551
4H-SiC Trench MOSFET With L-Shaped Gate.IEEE ELECTRON DEVICE LETTERS.2016,37(4):463-466
4H-SiC Trench MOSFET With L-Shaped Gate.IEEE ELECTRON DEVICE LETTERS.2016,37(4):463-466
Investigation of SiC trench MOSFET with floating islands.IET POWER ELECTRONICS.2016,9(13):2492-2499
Patents
采用金属发射极的碳化硅双极型晶体管器件及其制作方法
一种具有块状浮动结的碳化硅SBD器件及其制造方法
一种基于N型纳米薄层来提高N型DiMOSFET沟道迁移率方法
一种具有环形块状埋层的沟槽式浮动结碳化硅SBD器件
一种碳化硅沟槽MOS结势垒肖特基二极管及其制备方法
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