Personal Information:
Professor Supervisor of Doctorate Candidates graduate teacher
Paper Publications
- [1]Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands.SUPERLATTICES AND MICROSTRUCTURES.2016,99:62-66
- [2]Investigation of the novel 4H-SiC trench MOSFET with non-uniform doping floating islands.SUPERLATTICES AND MICROSTRUCTURES.2016,99:62-66
- [3]Design, Simulation, and Fabrication of 4H-SiC Power SBDs With SIPOS FP Structure.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.2015,15(4):543-551
- [4]4H-SiC Trench MOSFET With L-Shaped Gate.IEEE ELECTRON DEVICE LETTERS.2016,37(4):463-466
- [5]4H-SiC Trench MOSFET With L-Shaped Gate.IEEE ELECTRON DEVICE LETTERS.2016,37(4):463-466
- [6]Investigation of SiC trench MOSFET with floating islands.IET POWER ELECTRONICS.2016,9(13):2492-2499
- [7]Investigation of SiC trench MOSFET with floating islands.IET POWER ELECTRONICS.2016,9(13):2492-2499
- [8]Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current.SCIENCE CHINA-TECHNOLOGICAL SCIENCES.2015,58(8):1369-1374
- [9]Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs.CHINESE PHYSICS B.2016,25(4)
- [10]Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors.CHINESE PHYSICS B.2016,25(3)