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Affiliation of Author(s):先进材料与纳米科技学院/微电子

Title of Paper:4H-SiC Trench MOSFET With L-Shaped Gate

Journal:IEEE ELECTRON DEVICE LETTERS

First Author:Song, Qingwen^Yang, Shuai^Tang, Guannan^Han, Chao^Zhang, Yimeng^Tang, Xiaoyan^Zhang, Yimen^Zhang, Yuming

Indexed by:Article

Document Code:SCI WOS:000373129300029

Volume:37

Issue:4

Page Number:463-466

ISSN No.:0741-3106

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI