个人简介

江希，男，工学博士，江西萍乡人，2021年博士毕业于湖南大学电气工程专业。主要从事功率半导体器件设计、功率器件可靠性、功率模块封装、智能驱动技术等研究。近年来，主持陕西省自然科学基金项目1项、广州市自然科学基金1项，作为骨干人员参与国家863计划项目、国家自然科学基金重点项目、南通市科技局重点项目。以第一作者/通讯作者在IEEE、IET等期刊与会议上发表SCI/EI论文20余篇。担任电力与能源领域 IEEE TPEL、JESTPE、TIA等学术期刊审稿专家。欢迎各位学生提前联系与咨询。

代表性期刊论文

lXi Jiang, et al., "Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMT," in IEEE Transactions on Electron Devices,vol. 71, no. 3, pp. 1455-1463,2024.(SCI, IF=3.1)

lY. Wang,Xi Jiang,et al., "Online Junction Temperature Estimation for SiC MOSFETs Using Drain Voltage Falling Edge Time," in IEEE Transactions on Electron Devices, vol. 70, no. 10, pp. 5228-5235, Oct. 2023.(通讯作者）(SCI, IF=3.1)

lZ. Yan,S.Yuan,Xi Jiang,et al., "A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors," in IEEE Transactions on Electron Devices, vol. 70, no. 10, pp. 5087-5091, Oct. 2023.(通讯作者）(SCI, IF=3.1)

lH. Yu, S. Liang, J. Wang,Xi Jiang,et al., "Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-Load Current Stress," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 5070-5080, Oct. 2022.(SCI, IF=5.9)

lS.Yuan,Y.Li,M.Hou,XiJiang,et al., "Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT,"in Micromachines, vol. 15, no. 73,2024.(通讯作者）(SCI, IF=3.3)

lXi Jiang, J. Wang, J. Chen, et al., "Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 8, no. 1, pp. 77-89, March 2020.(SCI, IF=5.9)

lXi Jiang, J. Wang, H. Yu, et al., "Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction," in IEEE Transactions on Power Electronics, vol. 36, no. 4, pp. 3757-3768, April 2021.(SCI, IF=6.7)

lXi Jiang, J. Wang, J. Chen, H. Yu, Z.Li, Z. John Shen, " Investigation on Degradation of SiC MOSFET under Accelerated Stress in PFC Converter ," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4299-4310, Aug. 2021.(SCI, IF=5.9)

lXi Jiang, J. Wang, J. Lu, J. Chen, X. Yin, Z. Li, C. Tu, J. Shen, “Failure Modes and Mechanism Analysis of SiC MOSFET under Short-Circuit Conditions”, in Microelectronics Reliability,vol. 88-90, pp. 593-597,2018.(SCI, IF=1.6)

lJ. Wang,Xi Jiang, Z. Li and Z. J. Shen, "Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch," in IEEE Transactions on Power Electronics, vol. 34, no. 3, pp. 2771-2780, March 2019.(通讯作者）(SCI, IF=6.7)

lJ. Wang,Xi Jiang, "Review and analysis of SiC MOSFETs’ ruggedness and reliability," in IET Power Electronics, Vol. 13, Issue 3, pp.445–455, 2019.(通讯作者）(SCI, IF=2.3)

lZ. Li, X. Dai,Xi Jiang, et al. "A novel gate driver for Si/SiC hybrid switch for multi-objective optimization."inIET Power Electronics, Vol. 14, pp.422–431, 2020.(通讯作者）(SCI, IF=2.3)

专利

l江希,徐志佳,尹溶璐,袁嵩,何艳静,弓小武. 一种垂直导电型功率半导体器件双面压接封装结构[P]. ZL202210824287.4, 2022-07-13. （发明专利）

l江希,姜涛,袁嵩,张世杰,严兆恒,何艳静,弓小武. 三端电压控制器件及其制作方法[P]. 202210671019.3,2022-06-14. （发明专利）

l王俊,李宗鉴,江希. 一种半导体结构以其制作方法[P]. ZL106449729B,2019-04-30. （发明专利）

主要讲授课程

l功率半导体器件可靠性

平台与团队信息

第三代半导体与集成电路研究中心

氮化镓、碳化硅半导体器件及模块封装测试技术平台（弓小武教授）

团队科研环境自由、氛围轻松融洽。欢迎电气、电子、自动化、物理等学科的学生报考研究生！

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