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基于SiN埋绝缘层的机械致单轴应变GeOI晶圆的制作方法

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Affilication of Author(s):100900

Teaching and Research Group:2101

Patent Coverage:1

Type of Patent:1

Application Number:201110361530.5

Number of Inventors:8

Service Invention or Not:no

Application Date:2011-11-16

Authorization Date:2014-09-24

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