Hits:
Affilication of Author(s):微电子学院
Patent Coverage:国内
Type of Patent:发明专利
Application Number:201110361525.4
Number of Inventors:7
Service Invention or Not:no
Application Date:2011-11-16
Authorization Date:2014-09-24
Pre One:基于SiN埋绝缘层的机械致单轴应变GeOI晶圆的制作方法
Next One:基于高级加密标准AES的128比特位密钥扩展方法