Hits:
Affilication of Author(s):微电子学院
Patent Coverage:国内
Type of Patent:发明专利
Application Number:201210133163.8
Number of Inventors:6
Service Invention or Not:no
Application Date:2012-05-02
Authorization Date:2014-08-20
Pre One:GaN基的MS栅增强型高电子迁移率晶体管及制作方法
Next One:基于GaN的MIS栅增强型HEMT器件及制作方法