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基于GaN的MIS栅增强型HEMT器件及制作方法

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Affilication of Author(s):微电子学院

Patent Coverage:国内

First Author:Jincheng Zhang

Type of Patent:发明专利

Application Number:201210131041.5

Number of Inventors:11

Service Invention or Not:no

Application Date:2012-04-29

Authorization Date:2014-08-20

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