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Affilication of Author(s):微电子学院
Patent Coverage:国内
Type of Patent:发明专利
Application Number:201210000505.9
Number of Inventors:7
Service Invention or Not:no
Application Date:2012-01-02
Authorization Date:2014-04-02
Pre One:基于GaN的MIS栅增强型HEMT器件及制作方法