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郝跃

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Professor

Paper Publications

[21]The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT.IEICE ELECTRONICS EXPRESS.2015,12(24)
[22]InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2015,30(7)
[23]Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors.CHINESE PHYSICS B.2015,24(11)
[24]Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment.CHINESE PHYSICS B.2015,24(2)
[25]Analysis of the third harmonic for class-F power amplifiers with an I-V knee effect.CHINESE PHYSICS B.2015,24(5)
[26]Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range.Chinese Physics B.2014,23(9)
[27]Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors.Chinese Physics B.2014,23(9)
[28]A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor.Physica Status Solidi (A) Applications and Materials Science.2017,214(1)

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