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Professor
Paper Publications
- [11]X-band inverse class-F GaN internally-matched power amplifier.CHINESE PHYSICS B.2016,25(9)
- [12]Superior transport properties of InGaN channel heterostructure with high channel electron mobility.APPLIED PHYSICS EXPRESS.2016,9(6)
- [13]Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition.CHINESE PHYSICS B.2016,25(1)
- [14]Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers.CHINESE PHYSICS LETTERS.2016,33(6)
- [15]Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor.CHINESE PHYSICS B.2016,25(2)
- [16]A novel graphical method for dual-frequency two sections transformer.IEICE ELECTRONICS EXPRESS.2016,13(12)
- [17]Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses.APPLIED PHYSICS LETTERS.2015,107(6)
- [18]Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs.AIP ADVANCES.2015,5(9)
- [19]A 5-8 GHz wideband 100 W internally matched GaN power amplifier.IEICE ELECTRONICS EXPRESS.2015,12(6)
- [20]A multi-cell battery pack monitoring chip based on 0.35-mu m BCD technology for electric vehicles.IEICE ELECTRONICS EXPRESS.2015,12(12)