Threshold voltage engineering in GaN-based HEMT by using La2 O3 gate dielectric
Hits:
Affiliation of Author(s):微电子学院
Title of Paper:Threshold voltage engineering in GaN-based HEMT by using La
Journal:Physica Status Solidi (C) Current Topics in Solid State Physics
Document Code:EI 20160801969532
Volume:13
Issue:5-6
Page Number:325-327
Translation or Not:no
Date of Publication:2016-01-01
Included Journals:EI