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Superior transport properties of InGaN channel heterostructure with high channel electron mobility

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Affiliation of Author(s):微电子学院

Title of Paper:Superior transport properties of InGaN channel heterostructure with high channel electron mobility

Journal:APPLIED PHYSICS EXPRESS

First Author:Zhang, Yachao^Zhou, Xiaowei^Xu, Shengrui^Zhang, Jinfeng^Zhang, Jincheng^Hao, Yue

Indexed by:Article

Document Code:SCI WOS:000377795800003

Volume:9

Issue:6

ISSN No.:1882-0778

Translation or Not:no

Date of Publication:2016-01-01

Included Journals:SCI

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