Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
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Affiliation of Author(s):微电子学院
Affiliation of Author(s):微电子学院
Title of Paper:Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Title of Paper:Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Journal:CHINESE PHYSICS B
Journal:CHINESE PHYSICS B
First Author:Luo, Jun^Zhao, Sheng-Lei^Mi, Min-Han^Chen, Wei-Wei^Hou, Bin^Zhang, Jin-Cheng^Ma, Xiao-Hua^Hao, Yue
Indexed by:Article
Document Code:SCI WOS:000370179100064