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个人信息：Personal Information
副教授
性别：男
毕业院校：西安电子科技大学
学历：博士研究生毕业
学位：博士学位
在职信息：在岗
所在单位：先进材料与纳米科技学院
入职时间：2006-04-01
学科：材料科学与工程
办公地点：西电南校区G楼142东
电子邮箱：
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- [1]Xinlan Hu, Liang He, Hua Chen, Yunxuan Lv, Haowen Gao, Juncheng Liu.The effect of electric-thermal-vibration stress coupling on the reliability of Sn-Ag-Cu solder joints, Journal of Electronic Materials.Journal of Electronic Materials.2021,51 :284-294
- [2]Hao Ni, Liang He, Hua Chen and Xiaofei Jia.Reliability simulation and life prediction of TSV under a thermoelectric coupling field in a 3D integrated circuit.Journal of Electronic Materials.2021,50 (6):3592-3602
- [3]Hua Chen, Liang He.The spatial and energy distribution of oxide trap responsible for 1/f noise in 4H-SiC MOSFETs.Journal of Physics Communications.2021,5 (3):035002
- [4]程基宽，胡林娜，何亮，郭永刚，宋志成，屈小勇.基于1/f噪声表征研究非晶硅薄膜太阳电池的光致退化机理.太阳能学报.2021,42 (5):230-233
- [5]胡林娜，宋志成，何亮等.基于GR噪声的太阳电池缺陷表征研究.太阳能学报.2021,42 (3):319-322
- [6]Jiahao Liu, Liang He, Hua Chen, Pan Zhao, Yahui Su, Li Chao, Qin Pan.Reliability simulation and life prediction of Sn63Pb37 BGA solder joint under thermal cycling load.2020 China Semiconductor Technology International Conference(CSTIC 2020).2020
- [7]Liang He, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, Jerome Mitard, Liesbet Witters, Naoto Horiguchi, Nadine Collaert, Cor Claeys and Eddy Simoen.Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior.IEEE Transactions on Electron Devices.2019,66 (2):1050-1056
- [8]Linna Hu, Liang He, Hua Chen, Xiaofei Jia, Ying Hu, Hongmei Ma, Dandan Guo and Yu Qin.Defect characterizaiton of amorphous silicon thin film solar cell based on low frequency noise.Sci. China Inf. Sci..2018,61 (6):069403
- [9]Cor CLaeys, Liang He, Barry O’Sullivan et al..Low frequency noise analysis of impact of metal gate processing on the gate oxide stack quality.ECS Journal of Solid State Science and Technology.2018,7 (3):Q26-Q32
- [10]Eddy Simoen, Po-Chun Hsu, Liang He, et al..Do we have to worry about extended defects in high-mobility materials?.Proc. of CSTIC 2018
- [11]L. He, E. Simoen, C. Claeys, J. Luo, G. Wang, H. Chen, Y. Hu and X.T. Qing.Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors.Proc. of CSTIC 2017.2017
- [12]L. He, E. Simoen, C. Claeys, H. Chen, D. D. Guo, L. N. Hu and Y. Qin.Deep Traps in In0.3Ga0.7As nFinFETs Studied by Generation-Recombination noise.Proc. of ICNF 2017
- [13]E.Simoen, L.He, B.J.O’Sullivan, et al..Impact of the metal gate on the oxide stack quality assessed by low-frequency noise.ECS Trans..2017,80 (4):69-80
- [14]He Liang，Chen Hua，Sun Peng，Jia Xiaofei，Dai Chongguang，Liu Jing，Shao Long，Liu Zhaoqing.Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices.SCIENCE CHINA-INFORMATION SCIENCES.2016,59 (4)
- [15]He Liang, Zhang Xue.Quality estimate method of solar cells based on noise testing.Acta. Energiae Solaris Sinica..2013,34 (12):2237-2240
- [16]He Liang, Du Lei, Huang Xiao-jun, et al..Non-Gaussian analysis of noise for metal interconnection electromigration.Acta. Physica Sinica..2012,61 (20):206601
- [17]Han L, Ning T, Liu DL, He L.The study on the stress and the friction coefficient of tetrahedral amorphous carbon films bombarded by energetic Ar ion.Acta. Physica Sinica..2012,61 (17):176801
- [18]Sun P, Du L, He L, Chen WH, Liu YD and Zhao Y.Radiation degradation mechanism of pn-junction diode based on 1/f noise varclatrion.Acta. Physica Sinica..2012,61 (12):127808
- [19]Han L, Shao HX, He L, Chen X and Zhao YQ.The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film.Acta. Physica Sinica..2012,61 (10):106803
- [20]Sun P, Du L, Chen WH, He L and Zhang XF.A radiation model of metal-oxide-semiconductor field effect transistor.Acta. Physica Sinica..2012,61 (10):107803