侯斌
个人信息:Personal Information
副教授 研究生导师
性别:男
毕业院校:西安电子科技大学
学历:博士研究生毕业
学位:工学博士学位
在职信息:在岗
所在单位:微电子学院
入职时间:2019-03-01
学科:微电子学与固体电子学
办公地点:西安电子科技大学宽禁带半导体国家工程中心403
联系方式:bhou@xidian.edu.cn houbinme@163.com
电子邮箱:
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- [1]Improved the C –V Curve Shift, Trap State Responsiveness, and Dynamic RON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State Stress.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [2]牛雪锐.Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [3]牛雪锐.Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [4]芦浩.Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [5]芦浩.AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity.IEEE TRANSACTIONS ON ELECTRON DEVICES
- [6]1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with fT/fmax of 41/125 GHz.Applied Physics Express
- [7]Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors.APPLIED PHYSICS LETTERS
- [8]芦浩.High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination.IEEE ELECTRON DEVICE LETTERS
- [9]0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique.IEEE ELECTRON DEVICE LETTERS
- [10]High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application.JOURNAL OF PHYSICS D-APPLIED PHYSICS
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