一种N极性III族氮化物半导体器件的性能预测方法及装置
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Affilication of Author(s):微电子学院
First Author:guangbao shan
Type of Patent:发明
Application Number:CN202111507585.2
Authorization number:CN202111507585.2
Service Invention or Not:no
Authorization Date:2021-12-10
Hits:
Affilication of Author(s):微电子学院
First Author:guangbao shan
Type of Patent:发明
Application Number:CN202111507585.2
Authorization number:CN202111507585.2
Service Invention or Not:no
Authorization Date:2021-12-10