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硅通孔阵列峰值温度和参数的优化方法及系统

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Affilication of Author(s):微电子学院

Patent Coverage:国内

First Author:guangbao shan

Type of Patent:发明

Application Number:CN202111171043.2

Authorization number:CN202111171043.2

Number of Inventors:5

Service Invention or Not:no

Application Date:2021-10-08

Authorization Date:2023-08-11

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