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Paper Publications

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[1] A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study
2019-09-15
[2] Novel Superjunction LDMOS with a High-K Dielectric Trench by TCAD Simulation Study
2019-09-15
[3] Theory Analyses of SJ-LDMOS with Multiple Floating Buried Layers Based on Bulk Electric Field Modulation
2019-09-15
[4] Theoretical Analyses of Complete 3-D Reduced Surface Field LDMOS With Folded-Substrate Breaking Limit of Superjunction LDMOS
2019-09-15
[5] Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon
2019-09-15
[6] Novel Superjunction LDMOS with Multi-Floating Buried Layers
2019-09-15

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曹震

Personal Information:

Name (Simplified Chinese):曹震
Name (English):Zhen Cao
Name (Pinyin):CAOZHEN
Education Level:With Certificate of Graduation for Doctorate Study
Gender:Male
Degree:Doctoral Degree in Engineering
Professional Title:Lecturer
Academic Titles:讲师（高校）
Alma Mater:西安电子科技大学
graduate teachergraduate teacher