Novel Superjunction LDMOS with a High-K Dielectric Trench by TCAD Simulation Study
Date of Publication:2019-09-15Hits:
- Journal:IEEE Transactions on Electron Devices
- Place of Publication:美国
- Indexed by:Journal paper
- Document Type:J
- Volume:66
- Issue:5
- Page Number:2327-2332
- Translation or Not:no
- Date of Publication:2019-03-18
- Included Journals:SCI
